The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Mar. 15, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jimin Chae, Suwon-si, KR;
Younglim Park, Suwon-si, KR;
Dongmin Shin, Suwon-si, KR;
Jaesoon Lim, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of forming a capacitor includes forming lower electrodes including a first metal; forming a support layer pattern, which connects outer side walls of the lower electrodes to each other; forming a first interface layer including a first metal oxide having conductivity on the lower electrodes and the support layer pattern; forming a second interface layer including a second metal oxide having conductivity on the first interface layer; diffusing a second metal included in the second interface layer to a lower electrode surface so as to form a first interface structure including at least the first metal and the second metal on the lower electrode surface; completely removing at least the second interface structure formed on the support layer pattern through an etching process; forming a dielectric layer on the first interface structure and the support layer pattern; and forming an upper electrode on the dielectric layer.