The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Mar. 17, 2023
Applicant:

Raytheon Company, Waltham, MA (US);

Inventors:

John P. Bettencourt, Boxford, MA (US);

Joseph Peter Davis, Andover, MA (US);

John C. Tremblay, Lancaster, MA (US);

Assignee:

Raytheon Company, Arlington, VA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/217 (2006.01); H03F 1/26 (2006.01);
U.S. Cl.
CPC ...
H03F 3/2171 (2013.01); H03F 1/26 (2013.01); H03F 2200/451 (2013.01);
Abstract

A circuit comprises an amplifier and a bias circuit. The amplifier comprises an output transistor comprising a source electrode, a drain electrode, and a gate electrode. The bias circuit comprises: a first control loop configured to set a first quiescent bias for the output transistor based on a first value of a first control voltage and a second value of a second control voltage, wherein the first quiescent bias is configured to put the output transistor in an on state; and a second control loop configured to set a second quiescent bias for the output transistor based on the first value of the first control voltage and the second value of the second control voltage. The second quiescent bias is configured to put the output transistor in an off state and to increase an insertion loss of the amplifier when the output transistor is in the off state.


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