The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Dec. 12, 2023
Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventors:

Shintaro Nakatani, Tokyo, JP;

Takamasa Ichino, Tokyo, JP;

Chia Hsing Wei, Tokyo, JP;

Yuki Tanaka, Tokyo, JP;

Tomoaki Hyodo, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32724 (2013.01); H01L 21/68757 (2013.01); H01L 21/68785 (2013.01); H01J 2237/334 (2013.01);
Abstract

A plasma processing apparatus including a metallic base material disposed inside a wafer stage and having a cylindrical shape or a circular plate shape; a dielectric film disposed on an upper surface of the base material; a film-shaped heater disposed inside the dielectric film; a refrigerant flow path disposed in a concentric shape or in a spiral shape about a center of the base material in the base material and allowing a refrigerant to flow therethrough; and at least one arc-shaped space multiply disposed about the center in the base material between the refrigerant flow path and the heater and having an inside reduced to a predetermined degree of vacuum and sealed. A region of a portion of the base material between the disposed arc-shaped spaces is projected and overlapped on a region of an intermediate portion of the base material that partitions two of the adjacent refrigerant flow paths.


Find Patent Forward Citations

Loading…