The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Jan. 11, 2024
Applicant:

Samsung Electro-mechanics Co., Ltd., Suwon-si, KR;

Inventors:

Jin Yeop Yoo, Suwon-si, KR;

Young Hoon Song, Suwon-si, KR;

Dong Ju Kim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/224 (2006.01); H01G 4/12 (2006.01); H01G 4/30 (2006.01); H01G 4/012 (2006.01);
U.S. Cl.
CPC ...
H01G 4/224 (2013.01); H01G 4/1227 (2013.01); H01G 4/30 (2013.01); H01G 4/012 (2013.01);
Abstract

A multilayer electronic component includes: a body including a dielectric layer and an internal electrode alternately disposed with the dielectric layer; and an external electrode disposed on the body, in which the body includes a capacitance formation portion and margin portions disposed on both surfaces of the capacitance formation portion in a width direction, the margin portions include a first region adjacent to the capacitance formation portion, a third region adjacent to an external surface of the margin portion, and a second region disposed between the first and third regions, and G>Gand G>Gwhen an average grain size of a dielectric grain included in the first region is referred to as G, an average grain size of a dielectric grain included in the second region is referred to as G, and an average grain size of a dielectric grain included in the third region is referred to as G


Find Patent Forward Citations

Loading…