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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12592281 B1

PDFFull Text
Date of Patent:
Mar. 31, 2026

Filed:

Mar. 27, 2023

Semiconductor devices and electronic systems including the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sooyong Lee, Suwon-si, KR;

Kyung Jae Park, Suwon-si, KR;

Yongjin Cho, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Attorney:

Wolf, Greenfield & Sacks, P.C.

Primary Examiner:

Christopher A Johnson

Int. Cl.
CPC ...
H10B 43/27 (2023.01); G11C 16/04 (2006.01); H01L 23/528 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/40 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01); H01L 25/065 (2023.01); H10B 80/00 (2023.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); H01L 23/5283 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/40 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02); H01L 25/0652 (2013.01); H10B 80/00 (2023.02);
Abstract

Disclosed are a semiconductor device and an electronic system including the same. The semiconductor device may include a stack on a substrate and extending in a first direction, the stack including electrodes vertically stacked on the substrate, string selection lines that are on the stack, extend parallel to the first direction, and are spaced apart from each other in a second direction crossing the first direction, an upper separation pattern that is on the stack, extends in the first direction, and is between the string selection lines, lower vertical structures in the stack, and upper vertical structures in the string selection lines and electrically connected to the lower vertical structures, respectively.

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