The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Jun. 05, 2023
Applicant:

The Government of the United States of America, As Represented BY the Secretary of the Navy, Arlington, VA (US);

Inventors:

Hans Cho, Vienna, VA (US);

Frank Keith Perkins, Alexandria, VA (US);

Cory D. Cress, Springfield, VA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/54 (2006.01); G06N 3/049 (2023.01); G06N 3/063 (2023.01); G06N 3/065 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01); H10N 79/00 (2026.01);
U.S. Cl.
CPC ...
G11C 11/54 (2013.01); G06N 3/049 (2013.01); G06N 3/063 (2013.01); G06N 3/065 (2023.01); H10B 63/00 (2023.02); H10N 70/828 (2023.02); H10N 70/20 (2023.02); H10N 79/00 (2023.02);
Abstract

Neural network systems and methods are provided. In one embodiment, a method of making a neural network device includes: forming a mesh layer on a substrate, the mesh layer including a matrix of randomly dispersed conductive nano-strands insulated from one another; forming an isolation trench extending into the mesh layer; forming a memristor device extending into the mesh layer, the memristor device including: an electrical conductor, and a layer of memristive material in electrical contact with individual nano-strands of a first set of conductive nano-strands in the mesh layer; forming an electrode extending into the mesh layer and spaced from the memristor device by the isolation trench, wherein the electrode is in electrical contact with individual conductive nano-strands of a second set of conductive nano-strands in the mesh layer; and forming a modulating device bridging the memristor device and the electrode.


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