The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Mar. 22, 2021
Applicant:

Hoya Corporation, Tokyo, JP;

Inventors:

Kota Suzuki, Tokyo, JP;

Masanori Nakagawa, Tokyo, JP;

Takahiro Onoue, Tokyo, JP;

Assignee:

HOYA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/48 (2012.01); G03F 1/54 (2012.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); G03F 1/48 (2013.01); G03F 1/54 (2013.01);
Abstract

Provided are a substrate with a multilayer reflective film, a reflective mask blank, a reflective mask, and a method for manufacturing a semiconductor device, having high resistance to an etching gas used for etching an absorber film and/or an etching mask film and capable of suppressing occurrence of blister. A substrate with a multilayer reflective filmcomprises a substrate, a multilayer reflective filmformed on the substrate, and a protective filmformed on the multilayer reflective film. The protective filmcomprises ruthenium (Ru), rhodium (Rh), and at least one additive element selected from the group consisting of titanium (Ti), zirconium (Zr), yttrium (Y), niobium (Nb), vanadium (V), and hafnium (Hf).


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