The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Oct. 17, 2022
Applicant:

Suzhou Institute of Nano-tech and Nano-bionics (Sinano), Cas, Suzhou, CN;

Inventors:

Miao Wang, Suzhou, CN;

Juemin Yi, Suzhou, CN;

Jianfeng Wang, Suzhou, CN;

Ke Xu, Suzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 5/30 (2006.01); H01S 5/02212 (2021.01); H01S 5/024 (2006.01); H01S 5/323 (2006.01);
U.S. Cl.
CPC ...
G02B 5/3058 (2013.01); H01S 5/323 (2013.01); G02B 2207/101 (2013.01); H01S 5/02212 (2013.01); H01S 5/02469 (2013.01);
Abstract

The present invention relates to a gallium nitride nano superstructure and a preparation method thereof. The gallium nitride nano superstructure is used for realizing circularly polarized light output of the gallium nitride-based laser. The gallium nitride nano superstructure comprises, from bottom to top, a substrate, a dielectric film layer and a nano-grating structure layer, a grating material of the nano-grating structure layer comprising one of gallium nitride, N-type gallium nitride and P-type gallium nitride, a grating period being in a range of 100 nm-280 nm, a grating height being in a range of 100 nm-300 nm, and a grating line width being in a range of 50 nm-200 nm. The gallium nitride nano superstructure of the present invention can be applied to a gallium nitride-based laser to realize the circularly polarized light output of the gallium nitride-based laser.


Find Patent Forward Citations

Wang, Miao. (2026). Gallium nitride nano superstructure and preparation method thereof and gallium nitride-based laser (U.S. Patent No. 12591085). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12591085

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