The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Jul. 18, 2023
Applicant:

Ngk Insulators, Ltd., Nagoya, JP;

Inventors:

Yusuke Watanabe, Nagoya, JP;

Daichi Ichikawa, Nagoya, JP;

Assignee:

NGK INSULATORS, LTD., Nagoya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/407 (2006.01); G01N 27/30 (2006.01); G01N 27/333 (2006.01); G01N 33/00 (2006.01);
U.S. Cl.
CPC ...
G01N 27/304 (2013.01); G01N 27/333 (2013.01); G01N 27/4071 (2013.01); G01N 33/0027 (2013.01);
Abstract

Provided is a gas sensor element or the like in which the diffusion mode of NOthat reaches a measurement electrode is changed from molecular diffusion to a mode of diffusing while repeatedly colliding with a wall face of a sufficiently narrow flow path. In a gas sensor element according to one aspect of the invention, a porous diffusion layer, which accounts for 70% or more of a cross-section of a flow path of a measurement target gas that is orthogonal to a flow direction of the measurement target gas, has a porosity of 5% or more and 25% or less, and is located at a position that is upstream of the measurement electrode and where the distance to the measurement electrode is 0.15 mm or less.


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