The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Apr. 20, 2022
Applicants:

National Technical University of Athens, Athina, GR;

Ioanna Zergioti, Athens, GR;

Bar-ilan University, Ramat-Gan, IL;

Graphenea Semiconductor S.l.u., Donostia, ES;

Inventors:

Ioanna Zergioti, Athens, GR;

Symeon Papazoglou, Athens, GR;

Filimon Zacharatos, Athens, GR;

Adamantia Logotheti, Athens, GR;

Amaia Pesquera, Donostia-San Sebastian, ES;

Amaia Zurutuza, Donostia-San Sebastian, ES;

Doron Naveh, Petach Tikva, IL;

Assignees:

[object Object];

National Technical University of Athens, Athina, GR;

Bar-Ilan University, Ramat-gan, IL;

Graphenea Semiconductor S.L.U., Donostia, ES;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/48 (2006.01); C01B 19/00 (2006.01); C01B 21/064 (2006.01); C01B 32/186 (2017.01); C01B 32/194 (2017.01); C01G 39/06 (2006.01); C09D 11/037 (2014.01); C09D 11/52 (2014.01); C23C 14/06 (2006.01); C23C 16/56 (2006.01); G01D 5/24 (2006.01); H01L 21/02 (2006.01); H10D 30/67 (2025.01); H10D 62/80 (2025.01); H10D 62/82 (2025.01);
U.S. Cl.
CPC ...
C23C 16/483 (2013.01); C01B 19/002 (2013.01); C01B 21/0648 (2013.01); C01B 32/186 (2017.08); C01B 32/194 (2017.08); C01G 39/06 (2013.01); C09D 11/037 (2013.01); C09D 11/52 (2013.01); C23C 14/0605 (2013.01); C23C 14/0647 (2013.01); C23C 16/56 (2013.01); G01D 5/2405 (2013.01); H01L 21/02568 (2013.01); H01L 21/02617 (2013.01); H10D 30/67 (2025.01); C01P 2002/76 (2013.01); C01P 2006/40 (2013.01); H10D 62/80 (2025.01); H10D 62/82 (2025.01); H10D 62/882 (2025.01);
Abstract

A system and method for performing is laser induced forward transfer (LIFT) of 2D materials is disclosed. The method includes generating a receiver substrate, generating a donor substrate, wherein the donor substrate comprises a back surface and a front surface, applying a coating to the front surface, wherein the coating includes donor material, aligning the front surface of the donor substrate to be parallel to and facing the receiver substrate, wherein the donor material is disposed adjacent to the target layer, and irradiating the coating through the back surface of the donor substrate with one or more laser pulses produced by a laser to transfer a portion of the donor material to the target layer. The donor material may include BiSeS, MOS, hexagonal boron nitride (h-BN) or graphene. The method may be used to create touch sensors and other electronic components.


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