The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
May. 26, 2022
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Joseph Aubuchon, San Jose, CA (US);
Philip A. Kraus, San Jose, CA (US);
Thai Cheng Chua, Cupertino, CA (US);
James Carducci, Sunnyvale, CA (US);
Hanhong Chen, Milpitas, CA (US);
Zhejun Zhang, Santa Clara, CA (US);
Hao Zhang, Newark, CA (US);
Xiankai Yu, Sunnyvale, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/34 (2006.01); C23C 16/04 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H10P 14/60 (2026.01); H10P 50/24 (2026.01); H10P 50/28 (2026.01);
U.S. Cl.
CPC ...
C23C 16/345 (2013.01); C23C 16/045 (2013.01); C23C 16/45536 (2013.01); C23C 16/45553 (2013.01); H01J 37/32201 (2013.01); H10P 14/6336 (2026.01); H10P 14/6339 (2026.01); H10P 50/242 (2026.01); H10P 50/283 (2026.01); H01J 2237/3321 (2013.01); H01J 2237/334 (2013.01);
Abstract
Methods for filling a substrate feature with a seamless dielectric gap fill are described. Methods comprise sequentially depositing a film with a seam and partially etching the film in the same processing chamber. Methods and apparatus allow for the same hardware to be used for PEALD deposition of a film as well as plasma etch of the film.