The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Jul. 09, 2021
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Yoshitaka Kimura, Tokyo, JP;
Hiroyuki Masumoto, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01); H01L 23/00 (2006.01); H01L 23/047 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49833 (2013.01); H01L 23/047 (2013.01); H01L 23/49838 (2013.01); H01L 24/49 (2013.01); H01L 2224/49175 (2013.01);
Abstract
A semiconductor device includes: an insulating substrate including a circuit pattern; a semiconductor chip mounted on the insulating substrate and connected to the circuit pattern; and an overcurrent interruption mechanism constituted with a same material as material of the circuit pattern, connected to the circuit pattern in series, wherein when an overcurrent flows, the overcurrent interruption mechanism melts and is cut.