The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Jul. 21, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Aenee Jang, Suwon-si, KR;

Wonil Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2023.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/544 (2006.01); H10B 80/00 (2023.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 23/3107 (2013.01); H01L 23/544 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H10B 80/00 (2023.02); H01L 24/32 (2013.01); H01L 24/96 (2013.01); H01L 24/97 (2013.01); H01L 2223/54426 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/08225 (2013.01); H01L 2224/32221 (2013.01); H01L 2224/96 (2013.01); H01L 2224/97 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06593 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1436 (2013.01); H01L 2924/1437 (2013.01); H01L 2924/1441 (2013.01);
Abstract

A semiconductor package includes a first semiconductor chip, a plurality of second semiconductor chips stacked on the first semiconductor chip, and having widths narrower than a width of the first semiconductor chip, and a molded layer on an upper surface of the first semiconductor chip. The first semiconductor chip includes first front-surface pads, a first back-surface insulating layer divided into a first region and a second region, first back-surface pads in the first region, dummy pads in the second region, the dummy pads respectively having an upper surface on which a metal oxide film is disposed, and a first through-electrode electrically connecting the first front-surface pads and the first back-surface pads to each other. The plurality of second semiconductor chips respectively includes second front-surface pads, second back-surface pads, and a second through-electrode electrically connecting the second front-surface pads and the second back-surface pads to each other.


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