The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Nov. 02, 2022
Applicant:

Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;

Inventors:

Bo-An Tsai, Hsinchu City, TW;

Shyng-Yeuan Che, Hsinchu County, TW;

Shih-Ping Lee, Hsinchu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); G06F 21/79 (2013.01);
U.S. Cl.
CPC ...
H01L 23/576 (2013.01); G06F 21/79 (2013.01);
Abstract

A physical unclonable function (PUF) generator structure including a substrate and a PUF generator is provided. The PUF generator includes a first electrode layer, a second electrode layer, a first dielectric layer, a first contact, a second contact, and a third contact. The first electrode layer is disposed on the substrate. The second electrode layer is disposed on the first electrode layer. The first dielectric layer is disposed between the first electrode layer and the second electrode layer. The first contact and the second contact are electrically connected to the first electrode layer and are separated from each other. The third contact is electrically connected to the second electrode layer.


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