The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Sep. 28, 2016
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Hideaki Togashi, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/48 (2006.01); H10F 39/00 (2025.01); H10F 39/12 (2025.01); H10F 39/18 (2025.01); H10K 19/20 (2023.01); H10K 30/83 (2023.01); H10K 39/32 (2023.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H10F 39/1825 (2025.01); H10F 39/191 (2025.01); H10F 39/199 (2025.01); H10F 39/8037 (2025.01); H10F 39/811 (2025.01); H10F 39/812 (2025.01); H10K 19/20 (2023.02); H10K 30/83 (2023.02); H10K 39/32 (2023.02);
Abstract

There is provided an image sensor including a semiconductor substrate having a first side and a second side and a photoelectric conversion element disposed at the first side of the semiconductor substrate. In addition, a through electrode is coupled to the photoelectric conversion element, where the through electrode includes a conductive portion and an insulating film. A thickness of the insulating film between the semiconductor substrate and the conductive portion at the first side of the semiconductor substrate is different than the thickness of the insulting film between the semiconductor substrate and the conductive portion at the second side of the semiconductor substrate.


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