The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Jun. 16, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventor:

Wolfgang R. Aderhold, Cupertino, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/225 (2006.01); H01L 21/268 (2006.01); H01L 21/324 (2006.01); H10D 62/834 (2025.01);
U.S. Cl.
CPC ...
H01L 21/67115 (2013.01); H01L 21/2254 (2013.01); H01L 21/268 (2013.01); H01L 21/324 (2013.01); H10D 62/834 (2025.01);
Abstract

A method and apparatus for diffusing a dopant within a semiconductor device is described. The method includes performing a dynamic surface anneal in which a substrate is placed inside of a process volume with a mixture of an inert gas and a small amount of oxygen gas. The surface of the substrate is then exposed to one or more rapid laser pulses. The rapid laser bursts diffuse dopant from a doped layer into the substrate. The doped layer is formed during a previous process operation. The temperature and number of laser pulses control the amount of diffusion of the dopant into the substrate. Other dynamic surface anneal operations may be optionally performed before or after the oxygenated dynamic surface anneal operation.


Find Patent Forward Citations

Loading…