The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Oct. 13, 2023
Applicant:
United Semiconductor (Xiamen) Co., Ltd., Xiamen, CN;
Inventors:
Jian Liu, Xiamen, CN;
Chen Chen, Singapore, SG;
Chin-Chun Huang, Hsinchu County, TW;
Wen Yi Tan, Xiamen, CN;
Jinjian Ouyang, Xiamen, CN;
Assignee:
United Semiconductor (Xiamen) Co., Ltd., Xiamen, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/266 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/266 (2013.01); H01L 21/76224 (2013.01);
Abstract
The present invention uses the thinned second pad oxide layer as the pad oxide layer for the subsequent shallow trench isolation process. Therefore, it is not necessary to remove the entire pad oxide layer on the substrate surface after the P-type high-voltage ion well thermal drive-in process. The subsequent step of re-growing the pad oxide layer is omitted, thereby simplifying the process complexity.