The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Nov. 25, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Woochul Lee, Gunpo-si, KR;
Yongsung Kim, Suwon-si, KR;
Jiwoon Park, Suwon-si, KR;
Jooho Lee, Hwaseong-si, KR;
Yong-Hee Cho, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Disclosed are a layer structure including a dielectric layer, a method of manufacturing the dielectric layer, an electronic device including the dielectric layer, and an electronic apparatus including the electronic device. The dielectric layer according to at least one embodiment includes a first layer having a dielectric constant greater than that of silicon oxide and is undoped, a second layer configured to enhance a rutile phase of the first layer, and a third layer configured to increase a bandgap of the first layer. The method of manufacturing a dielectric layer according to an embodiment includes forming a first layer having a dielectric constant greater than that of silicon oxide; forming a phase stabilization layer for stabilizing a rutile phase of the first layer and forming a high-bandgap layer for increasing a bandgap of the first layer.