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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12588362 B1

PDFFull Text
Date of Patent:
Mar. 24, 2026

Filed:

Oct. 26, 2022

Display apparatus having a first insulating layer including first portion and second portion

Applicant:

Samsung Display Co., Ltd., Yongin-Si, KR;

Inventors:

Seulki Kim, Yongin-si, KR;

Yeeun Kang, Yongin-si, KR;

Shoyeon Kim, Yongin-si, KR;

Seungrae Kim, Yongin-si, KR;

Donghyun Won, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:

Innovation Counsel LLP

Primary Examiner:

Phuc T Dang

Int. Cl.
CPC ...
H01L 29/08 (2006.01); H10K 59/121 (2023.01); H10K 59/124 (2023.01); H10K 71/00 (2023.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10K 59/12 (2023.01);
U.S. Cl.
CPC ...
H10K 59/1216 (2023.02); H10K 59/1213 (2023.02); H10K 59/124 (2023.02); H10K 71/00 (2023.02); H10D 30/6755 (2025.01); H10D 86/423 (2025.01); H10D 86/481 (2025.01); H10D 86/60 (2025.01); H10K 59/1201 (2023.02);
Abstract

A display apparatus and a method of manufacturing the same are provided. The display apparatus includes a thin-film transistor including a semiconductor layer including a source region and a gate electrode overlapping the channel region, a lower electrode disposed under the semiconductor layer, a capacitor electrically connected to the thin-film transistor and including a first capacitor electrode and a second capacitor electrode over the first capacitor electrode, the first capacitor electrode being disposed on a same layer as the lower electrode, and a first insulating layer including a first portion and a second portion, the first portion being between the lower electrode and the semiconductor layer, and the second portion being between the first capacitor electrode and the second capacitor electrode, wherein a thickness of the second portion of the first insulating layer is less than a thickness of the first portion of the first insulating layer.

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