Infrared led element

Abstract

Provided are an infrared LED element with an emission wavelength of 1000 nm or more, which has improved emission efficiency by enhancing uniformity of light emission in a surface direction. The infrared LED element includes: a support substrate; a reflection layer formed on top of the support substrate; an insulating layer formed on top of the reflection layer; a contact layer formed on top of the insulating layer, the contact layer being made of GaInAsP(0≤x<0.33, 0≤y<0.70) of a first conduction type; a first cladding layer of the first conduction type, the first cladding layer being formed on top of the contact layer; an active layer formed on top of the first cladding layer; a second cladding layer of a second conduction type being formed on top of the active layer; a first electrode formed at each of a plurality of places in the insulating layer by passing through the insulating layer in a first direction orthogonal to a main surface of the support substrate, the first electrode connecting the contact layer to the reflection layer; and a second electrode formed on top of the second cladding layer.