Photoelectric conversion apparatus, photoelectric conversion system, and movable object

Abstract

A first avalanche diode including a first semiconductor region and a second avalanche diode including a second semiconductor region are provided, a first isolation portion is arranged between the first semiconductor region and the second semiconductor region, the first isolation portion is constituted by a third semiconductor region, or a fourth semiconductor regions and the third semiconductor regions arranged to sandwich the fourth semiconductor region in plan view, and in the fourth semiconductor regions, an impurity concentration Nd of the third semiconductor region, an impurity concentration Na of the fourth semiconductor region, an elementary electric charge q, a dielectric constant ε of a semiconductor, a potential difference V between a P-N junction of the third semiconductor region and the fourth semiconductor region, and a length D of the third semiconductor region sandwiched by the fourth semiconductor regions satisfy Expression 1.