The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Nov. 15, 2021
Hamamatsu Photonics K.k., Hamamatsu, JP;
Keiki Taguchi, Hamamatsu, JP;
Hajime Ishihara, Hamamatsu, JP;
Yoshiaki Ohshige, Hamamatsu, JP;
Kenji Makino, Hamamatsu, JP;
HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;
Abstract
A semiconductor light receiving element includes: a substrate; a semiconductor stacked portion that is formed on a first region of the substrate; and a first electrode and a second electrode that are electrically connected to the semiconductor stacked portion. Te semiconductor stacked portion includes: a light absorption layer of a first conductivity type including InGaAs; and a second region of a second conductivity type other than the first conductivity type that is located on the opposite side to the substrate with respect to the light absorption layer and bonded to the light absorption layer. The first electrode is connected to a first portion of the first conductivity type located on the substrate side with respect to the light absorption layer in the semiconductor stacked portion.