The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Sep. 28, 2021
Applicant:

Arm Limited, Cambridge, GB;

Inventors:

Rakshith C, Bangalore, IN;

Denil Das Kolady, Bangalore, IN;

Ashwani Kumar Srivastava, Austin, TX (US);

Assignee:

Arm Limited, Cambridge, GB;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 84/0191 (2025.01); H10D 84/038 (2025.01);
Abstract

Various implementations described herein refer to a device having a cell structure with multiple transistors including active n-type transistors and active p-type transistors disposed together within a cell boundary. The active n-type transistors may have a first diffusion region formed within the cell boundary at a first end of the cell structure. The active p-type transistors may have a second diffusion region formed within the cell boundary at a second end of the cell structure. The active p-type transistors may have a vacated region cut-out from the second diffusion region, and/or the active n-type transistors may have a vacated region cut-out from the first diffusion region.


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C, Rakshith. (2026). Logic cell structure with diffusion box (U.S. Patent No. 12588276). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12588276

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