The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Dec. 19, 2022
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Arash Elhami Khorasani, Phoenix, AZ (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US);
Abstract
A semiconductor structure includes a region of semiconductor material of a first conductivity type. A doped region of a second conductivity type is within the region of semiconductor material at a first depth. A semiconductor device is in a first portion of the region of semiconductor material and includes a first current carrying region of the second conductivity type and a second current carrying region. A PN diode is in a second portion of the region of semiconductor material and includes a cathode region of the second conductivity type and anode region of the first conductivity type. The cathode region is coupled to the first current carrying region, the anode region is coupled to the doped region, and the doped region is configured to electrically isolate the semiconductor device from region of semiconductor material below the doped region in response to a forward bias applied to the semiconductor device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile