The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Dec. 08, 2022
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Chia-Hao Lee, Hsinchu County, TW;
Chih-Cherng Liao, Hsinchu City, TW;
PO-Heng Lin, New Taipei City, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor device includes a compound semiconductor channel layer disposed on a substrate and located in an active element region and a passive element region. A compound semiconductor barrier layer is stacked on the compound semiconductor channel layer and located in the active element region and the passive element region. A source electrode, a gate electrode and a drain electrode are disposed on the compound semiconductor barrier layer and located in the active element region to construct a high electron mobility transistor. In addition, a first terminal electrode, an intermediate electrode and a second terminal electrode are disposed on the compound semiconductor barrier layer and located in the passive element region to construct a resistor.