The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Jan. 19, 2023
National Yang Ming Chiao Tung University, Hsinchu City, TW;
Bing-Yue Tsui, Hsinchu City, TW;
Jui-Cheng Wang, Hsinchu City, TW;
Li-Tien Hsueh, Taipei City, TW;
Jui-Tse Hsiao, Taichung City, TW;
NATIONAL YANG MING CHIAO TUNG UNIVERSITY, Hsinchu City, TW;
Abstract
A three-dimensional source contact structure and fabrication process method thereof are provided. A lithography process and shallow trench process are sequentially performed to form a metal contact window in a power device. A source heavily doped area is divided by the metal contact window into a first and second heavily doped region. A lateral etching process is applied to an inter-layer dielectric to form a first and a second dielectric layer, each of which is in a trapezoid shape. Meanwhile, a first and a second metal-source surface contact regions are exposed. A longitudinal surface exposed by the shallow trench process is beneficial to increase vertical contact when depositing a source contact metal, thereby a step-like three-dimensional source contact structure can be formed. The present invention achieves in reducing cell pitch effectively and can be widely applied to various power devices having MOSFET structure thereof.