The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Sep. 07, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Kazuki Minamikawa, Nomi Ishikawa, JP;
Daiki Yoshikawa, Kanazawa Ishikawa, JP;
Norio Yasuhara, Kanazawa Ishikawa, JP;
Kazutoshi Nakamura, Nonoichi Ishikawa, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Toshiba Electronic Devices & Storage Corporation, Kawasaki, JP;
Abstract
A semiconductor device includes first and second electrodes, a semiconductor part, a structure body, and an insulating part. The semiconductor part includes first to fifth semiconductor regions. The structure body includes a gate part and a dummy part. The gate part includes at least one gate electrode. The dummy part includes at least two dummy electrodes. The gate part and the dummy part are alternately arranged. The insulating part is located between the gate electrode and the semiconductor part. The gate part is located in the fourth semiconductor region. A first potential is applied to the second electrode. A second potential that is greater than the first potential is applied to the gate electrode. A third potential that is greater than the first potential is applied to the dummy electrode located at a position next to the gate part.