The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Jan. 06, 2023
Stmicroelectronics (Rousset) Sas, Rousset, FR;
Pascal Fornara, Pourrieres, FR;
Christian Rivero, Rousset, FR;
Franck Julien, La Penne sur Huveaune, FR;
STMicroelectronics (Rousset) SAS, Rousset, FR;
Abstract
A method of manufacturing a radio frequency switch includes the steps of: forming a first silicide layer on a second conductive or semiconductor layer; forming a third insulating layer on the first layer; forming a cavity in the third insulating layer reaching the first silicide layer; forming a fourth metal layer in the cavity in contact with the first silicide layer; performing a non-oxidizing annealing; and filling the cavity with a conductive material. The first silicide layer is provided on one or more of the gate, source, and drain of a transistor forming the radio frequency switch.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile