The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Sep. 20, 2022
Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Collin William Hitchcock, Clifton Park, NY (US);

Reza Ghandi, Niskayuna, NY (US);

Assignee:

GE Infrastructure Technology LLC, Greenville, SC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H10D 12/01 (2025.01); H10D 30/63 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
H10D 62/111 (2025.01); H10D 12/031 (2025.01); H10D 30/63 (2025.01); H10D 62/292 (2025.01); H10D 62/8325 (2025.01);
Abstract

A super-junction (SJ) device includes a first epitaxial (epi layer) that forms a first SJ layer of the SJ device and includes a second epi layer disposed on the first SJ layer that forms a device layer of the SJ device. An active area and a termination area of the first epi layer includes a first set of SJ pillars that have a particular doping concentration of a first conductivity type and a second set of SJ pillars that have the particular doping concentration of a second conductivity type. A termination area of the second epi layer includes one or more implanted regions that form a junction termination that overlaps with at least one SJ pillar of the first set of SJ pillars or the second set of SJ pillars in the termination area of the first epi layer.


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