The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Jul. 28, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hyuncheol Kim, Seoul, KR;
Yongseok Kim, Suwon-si, KR;
Dongsoo Woo, Seoul, KR;
Kyunghwan Lee, Seoul, KR;
Minjun Lee, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor memory device may include a substrate, first and second impurity regions on the substrate, first and second gate insulating layers sequentially stacked on the substrate and extended in a direction between the first and second impurity regions, and a gate electrode on the second gate insulating layer. The first and second impurity regions may have different conductivity types from each other, a bottom surface of the first gate insulating layer may be in direct contact with a top surface of the substrate, and the second gate insulating layer may include a ferroelectric material.