The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Oct. 18, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seungyoung Lee, Clifton Park, NY (US);

Saehan Park, Clifton Park, NY (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/43 (2025.01); B82Y 10/00 (2011.01); H01L 23/528 (2006.01); H01L 23/535 (2006.01); H03B 5/12 (2006.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); H10D 88/00 (2025.01); H10D 89/10 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6755 (2025.01); H03B 5/1228 (2013.01); H10D 30/6757 (2025.01);
Abstract

Cross-coupled structures are provided. Cross-coupled structures may include a first transistor, a second transistor, a third transistor, and a fourth transistor. The first transistor, the second transistor, and the fourth transistor may be spaced apart from each other in a first direction, and the third transistor and the second transistor may be stacked in a second direction that is perpendicular to the first direction. The third transistor and the second transistor may include a common gate structure, a first portion of the common gate structure may be a gate structure of the second transistor, and a second portion of the common gate structure may be a gate structure of the third transistor.


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