The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Mar. 23, 2021
Applicant:
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Inventors:
Huilong Zhu, Poughkeepsie, NY (US);
Chen Li, Beijing, CN;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/775 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 62/122 (2025.01); H10D 64/015 (2025.01); H10D 64/017 (2025.01); H10D 84/83 (2025.01);
Abstract
Disclosed are a semiconductor device having a U-shaped structure, a method of manufacturing the semiconductor device, and an electronic including the semiconductor device. According to an embodiment, the semiconductor device may include: a first fin and a second fin disposed opposite to each other, wherein the first fin and the second fin extend in a vertical direction with respect to a substrate; a connection nanosheet connecting a bottom end of the first fin to a bottom end of a second fin to form a U-shaped structure, wherein the connection nanosheet is spaced apart from a top surface of the substrate.