The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
May. 12, 2022
Unisantis Electronics Singapore Pte. Ltd., Singapore, SG;
Nozomu Harada, Tokyo, JP;
Koji Sakui, Tokyo, JP;
UNISANTIS ELECTRONICS SINGAPORE PTE. LTD., Singapore, SG;
Abstract
A dynamic flash memory cell includes an Si base material formed of a first channel region and a second channel region. In the Si base material, a first gate insulating layer surrounds the first channel region, and a second gate insulating layer surrounds the second channel region. A first gate conductor layer surrounds the first gate insulating layer, and a second gate conductor layer surrounds the second gate insulating layer. The first gate conductor layer is connected to a plate line PL, and the second gate conductor layer is connected to a word line WL. An Nlayers formed, respectively, on one ends of the Si base materials are connected to a source line, and an Nlayers formed, respectively, on the other ends of the Si base materials are connected to a bit line BL.