The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Feb. 01, 2023
Applicant:

Microchip Technology Incorporated, Chandler, AZ (US);

Inventor:

Yaojian Leng, Vancouver, WA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10D 1/692 (2025.01);
Abstract

A method for making a metal-insulator-metal (MIM) capacitors by etching a dielectric layer to form a via or contact hole, a tub, and a trench in the dielectric layer; depositing conformal metal in the via or contact hole, the tub, and the trench, wherein deposited conformal metal forms a via or contact in the via or contact hole; depositing a bottom electrode metal in the tub to form a bottom electrode of a metal-to-metal (MIM) capacitor; removing bottom electrode metal from the bottom electrode to form a dish-shape upper surface; depositing an insulator material on the bottom electrode to form an insulator layer of the MIM capacitor; and depositing a top electrode metal on the insulator layer to form a top electrode of the MIM capacitor.


Find Patent Forward Citations

Leng, Yaojian. (2026). Metal-insulator-metal (mim) capacitors with curved electrode (U.S. Patent No. 12588224). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12588224

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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