The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Mar. 21, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sung Heo, Suwon-si, KR;

Hajun Sung, Suwon-si, KR;

Seongyong Park, Suwon-si, KR;

Wooyoung Yang, Suwon-si, KR;

Dongjin Yun, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10B 61/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/24 (2023.02); H10B 61/10 (2023.02);
Abstract

A switching device including a first electrode layer, a second electrode layer arranged to face the first electrode layer, and a selection layer arranged between the first electrode layer and the second electrode layer, wherein the first electrode layer is doped with at least one of manganese (Mn), iron (Fe), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), iridium (Ir), or platinum (Pt), may be provided.


Find Patent Forward Citations

Heo, Sung. (2026). Metal-doped switching device and semiconductor device including the same (U.S. Patent No. 12588219). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12588219

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…