logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12588218 B1

PDFFull Text
Date of Patent:
Mar. 24, 2026

Filed:

Mar. 01, 2023

Chalcogenide material, switching device including the chalcogenide material, and memory device including the switching device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hajun Sung, Suwon-si, KR;

Youngjae Kang, Suwon-si, KR;

Bonwon Koo, Suwon-si, KR;

Yongyoung Park, Suwon-si, KR;

Dongho Ahn, Suwon-si, KR;

Kiyeon Yang, Suwon-si, KR;

Wooyoung Yang, Suwon-si, KR;

Changseung Lee, Suwon-si, KR;

Minwoo Choi, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

HARNESS, DICKEY & PIERCE, P.L.C.

Primary Examiner:

Mounir S Amer

Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10B 61/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/24 (2023.02); H10B 61/10 (2023.02); H10B 63/80 (2023.02);
Abstract

A chalcogenide material according to one embodiment includes germanium (Ge); arsenic (As); sulfur (S); selenium (Se), and at least one group III metal selected from indium (In), gallium (Ga), and aluminum (Al), wherein the content of the Ge may be greater than about 10 at % and less than or equal to about 30 at %, the content of the As may be greater than about 30 at % and less than or equal to about 50 at %, the content of Se is greater than about 20 at % and less than or equal to about 60 at %, the content of S is greater than about 0.5 at % and less than or equal to about 10 at %, and the content of the group III metal may be in the range of 0.5 at % to 10 at %.

Find Patent Forward Citations

Sung, Hajun. (2026). Chalcogenide material, switching device including the chalcogenide material, and memory device including the switching device (U.S. Patent No. 12588218). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12588218

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…