The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Mar. 14, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Siwan Kim, Suwon-si, KR;
Juwon Im, Suwon-si, KR;
Jonghyun Park, Suwon-si, KR;
Sori Lee, Suwon-si, KR;
Bongtae Park, Suwon-si, KR;
Jaejoo Shim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor device includes a first semiconductor structure including a first substrate and circuit devices; and a second semiconductor structure including a second substrate on the first semiconductor structure and having a first region and a second region, gate electrodes in the first region and stacked in a first direction, and extending in the second region by different lengths in a second direction, channel structures extending by penetrating through the gate electrodes, separation regions penetrating through the gate electrodes, extending in the second direction, spaced apart from each other in a third direction, and defining a center block region and an edge block region, and substrate insulating layers in the second substrate between the separation regions in the second region. A width of the substrate insulating layers in the third direction is greater in the edge block region than in the center block region.