The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Dec. 30, 2024
Calterah Semiconductor Technology (Shanghai) Co., Ltd, Shanghai, CN;
Zhefan Chen, Shanghai, CN;
Dian Wang, Shanghai, CN;
Kaijie Zhuang, Shanghai, CN;
Xuejuan Huang, Shanghai, CN;
Shan Li, Shanghai, CN;
Chenwu Yu, Shanghai, CN;
CALTERAH SEMICONDUCTOR TECHNOLOGY (SHANGHAI) CO., LTD., Shanghai, CN;
Abstract
The present application discloses a conversion apparatus from a chip package to a waveguide, a radio frequency apparatus and a radar apparatus. The conversion apparatus includes: a first metal layer as a metal ground layer, a second metal layer, a third metal layer, a shielding metallization via, a conversion via, and a dielectric substrate disposed between different metal layers to function as a support; the second metal layer is configured to lay an RF trace; the third metal layer is configured to dispose a patch element; a capacitance formed between the RF trace and patch element introduces capacitance characteristic; multiple shielding metallization vias are ground vias around the patch element and RF trace for guiding RF signal propagation; at least one conversion metallization via is disposed on one end of the RF trace close to the patch element, for connecting the RF trace and patch element and introducing inductance characteristic.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile