The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Jan. 29, 2024
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Hanhong Chen, Milpitas, CA (US);

Zhejun Zhang, Santa Clara, CA (US);

Chi-Chou Lin, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3244 (2013.01); H01J 37/32201 (2013.01); H01L 21/02274 (2013.01);
Abstract

Methods of treating a plasma showerhead comprise placing a showerhead comprising a faceplate and a plurality of gas openings PECVD substrate processing chamber having a process volume between the substrate support and the faceplate, and then exposing the showerhead to a silicon-containing precursor and a reactant gas so that the process volume and the gas openings are filled with the silicon-containing precursor and the reactant gas. The method includes introducing a first plasma in the PECVD substrate processing chamber to form a silicon oxide thin film or a silicon nitride thin film on the lower surface of the faceplate and lining the gas openings. A precursor-removing purge gas is flowed and a second plasma is struck to densify the thin film.


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