The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Dec. 14, 2023
Applicant:
Samsung Electro-mechanics Co., Ltd., Suwon-si, KR;
Inventors:
Hyoju Lee, Suwon-si, KR;
Jinwoo Kim, Suwon-si, KR;
Seokhyun Yoon, Suwon-si, KR;
Heesun Chun, Suwon-si, KR;
Tae Hyung Kim, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRO-MECHANICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01G 4/30 (2006.01); C04B 35/468 (2006.01); C04B 35/64 (2006.01); H01G 4/008 (2006.01); H01G 4/012 (2006.01); H01G 4/12 (2006.01);
U.S. Cl.
CPC ...
H01G 4/30 (2013.01); C04B 35/4682 (2013.01); C04B 35/64 (2013.01); H01G 4/008 (2013.01); H01G 4/012 (2013.01); H01G 4/1227 (2013.01);
Abstract
A multilayered capacitor including a capacitor body including a dielectric layer and an internal electrode, and an external electrode on the capacitor body, wherein the dielectric layer includes a plurality of dielectric crystal grains, at least one of the plurality of dielectric crystal grains has a core-shell structure, and the shell includes hafnium (Hf).