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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12586648 B1

PDFFull Text
Date of Patent:
Mar. 24, 2026

Filed:

Apr. 11, 2024

Memory device

Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Hideto Takekida, Nagoya Aichi, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:

Holtz, Holtz & Volek PC

Primary Examiner:

Jason Lappas

Int. Cl.
CPC ...
G11C 16/24 (2006.01); G11C 5/06 (2006.01); G11C 16/04 (2006.01); G11C 16/14 (2006.01); G11C 16/26 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 51/10 (2023.01); H10B 51/20 (2023.01); H10D 30/69 (2025.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 5/063 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 51/10 (2023.02); H10B 51/20 (2023.02); H10D 30/701 (2025.01); G11C 16/24 (2013.01);
Abstract

According to one embodiment, a memory device includes: a first semiconductor layer, a first conductive layer, a second semiconductor layer, and a second conductive layer that are arranged in this order in a first direction, spaced apart from each other; a first semiconductor film extending in the first direction, being in contact with the first semiconductor layer and the second semiconductor layer, and intersecting the first conductive layer and the second conductive layer; a first memory film provided between the first conductive layer and the first semiconductor film; and a second memory film provided between the second conductive layer and the first semiconductor film.

Find Patent Forward Citations

Takekida, Hideto. (2026). Memory device (U.S. Patent No. 12586648). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12586648

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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