The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Oct. 08, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Chanha Kim, Hwaseong-si, KR;

Youngeun Kim, Yongin-si, KR;

Kangho Roh, Seoul, KR;

Younghoon Jung, Seoul, KR;

Mijung Cho, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06N 20/20 (2019.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G06N 20/20 (2019.01); G11C 16/26 (2013.01);
Abstract

In a method of operating a storage device including a plurality of nonvolatile memories, reliability information of the storage device is predicted. A read operation on the storage device is performed based on a result of predicting the reliability information. In the predicting the reliability information of the storage device, a model request signal is outputted by selecting one of a plurality of machine learning models as an optimal machine learning model based on deterioration characteristic information and deterioration phase information. The model request signal corresponds to the optimal machine learning model. The plurality of machine learning models are used to generate first reliability information related to the plurality of nonvolatile memories. First parameters of the optimal machine learning model may be received based on the model request signal. The first reliability information is generated based on the deterioration characteristic information and the first parameters.


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