The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Nov. 02, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sung-Hwan Bae, Seoul, KR;

Se Jin Park, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/36 (2012.01); G03F 1/44 (2012.01); G03F 1/70 (2012.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
G03F 1/36 (2013.01); G03F 1/44 (2013.01); G03F 1/70 (2013.01); G03F 7/70525 (2013.01);
Abstract

A method of fabricating a mask by performing optical proximity correction (OPC) is provided. The method of fabricating a mask includes generating a target curve by using bias control points, extracting a first contour of an initial design mask by performing an OPC process, generating a first updated design mask, which is obtained by updating the initial design mask, by using the first contour and the target curve, extracting a second contour of the first updated design mask by performing the OPC process, and generating a second updated design mask by using the second contour and the target curve.


Find Patent Forward Citations

Bae, Sung-Hwan. (2026). Method of fabricating mask and method of fabricating semiconductor device using the mask (U.S. Patent No. 12585181). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12585181

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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