The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Jul. 14, 2021
Canon Kabushiki Kaisha, Tokyo, JP;
Kazuhiro Morimoto, Kanagawa, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
An optical detection apparatus includes a trench isolation portion provided in a substrate and disposed between a plurality of photoelectric conversion elements. Each of the plurality of photoelectric conversion elements includes an avalanche diode. The avalanche diode includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region having an impurity concentration lower than impurity concentrations of the first and second semiconductor regions. The trench isolation portion includes a conductor and an insulator disposed between the conductor and the avalanche diode, and on a sidewall of the trench isolation portion, a second conductivity type layer is formed in which charges of the second conductivity type are accumulated, and the second conductivity type layer and the second semiconductor region are in contact with each other.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile