The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Feb. 13, 2023
Applicant:

Raytheon Technologies Corporation, Farmington, CT (US);

Inventor:

John E. Holowczak, South Windsor, CT (US);

Assignee:

RTX Corporation, Farmington, CT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C04B 35/622 (2006.01); C04B 35/628 (2006.01); C04B 41/45 (2006.01);
U.S. Cl.
CPC ...
C04B 35/62281 (2013.01); C04B 35/62868 (2013.01); C04B 35/62876 (2013.01); C04B 41/4578 (2013.01); C23C 16/45525 (2013.01); C04B 2235/386 (2013.01); C04B 2235/408 (2013.01); C04B 2235/5244 (2013.01); C04B 2235/614 (2013.01); C04B 2235/76 (2013.01);
Abstract

A method of forming a ceramic matrix composite includes arranging a plurality of fibers into a preform, each of the plurality of fibers being formed from silicon carbide, depositing a nucleating layer on the plurality of fibers, the nucleating layer comprising a crystalline material having an a-lattice constant and a c-lattice constant, and depositing a boron nitride layer on the nucleating layer. The c-lattice constant of the crystalline material of the nucleating layer corresponds to an a-lattice constant of the silicon carbide, such that the c-lattice constant of the crystalline material is within 3.0% of the a-lattice constant of the silicon carbide.


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