The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Oct. 20, 2022
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Hiroyuki Masumoto, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/07 (2006.01); H01L 23/538 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01); H10D 8/00 (2025.01); H10D 12/00 (2025.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/072 (2013.01); H01L 23/5386 (2013.01); H10D 8/00 (2025.01); H10D 12/411 (2025.01); H01L 24/32 (2013.01); H01L 2224/32225 (2013.01);
Abstract

A semiconductor device includes an insulating layer; a foil conductor, a circuit pattern, a plurality of semiconductor elements, a first wiring board allowing an externally input current to flow through the circuit pattern, and a wiring board connecting the plurality of semiconductor elements and allowing the current that flowed through the plurality of semiconductor elements via the circuit pattern to flow. The plurality of semiconductor elements are arranged along an extending direction of the wiring board and, in a current path passing from the wiring board through the wiring board via the circuit pattern and the plurality of semiconductor elements, the electrical resistance of the current path passing through the semiconductor element arranged on the downstream side is lower than the electrical resistance of the current path passing through the semiconductor element arranged on the upstream side.


Find Patent Forward Citations

Masumoto, Hiroyuki. (2026). Semiconductor device and power conversion apparatus (U.S. Patent No. 12582003). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12582003

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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