The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Apr. 27, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seogwoo Hong, Yongin-si, KR;

Hyunjoon Kim, Seoul, KR;

Dongkyun Kim, Suwon-si, KR;

Dongho Kim, Seoul, KR;

Joonyong Park, Suwon-si, KR;

Kyungwook Hwang, Seoul, KR;

Junsik Hwang, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/075 (2006.01); H01L 23/00 (2006.01); H10H 20/01 (2025.01); H10H 20/831 (2025.01); H10H 20/857 (2025.01);
U.S. Cl.
CPC ...
H01L 25/0753 (2013.01); H01L 24/95 (2013.01); H10H 20/018 (2025.01); H10H 20/8312 (2025.01); H10H 20/857 (2025.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 2224/19 (2013.01); H01L 2224/2105 (2013.01); H01L 2224/211 (2013.01); H01L 2224/95102 (2013.01); H10H 20/032 (2025.01); H10H 20/0364 (2025.01);
Abstract

Provided is a semiconductor light emitting device including a semiconductor structure including a first semiconductor layer, a light emitting layer, and a second semiconductor layer, a side extension structure disposed adjacent to a sidewall of the semiconductor structure, a first electrode having a first portion extending through the second semiconductor layer and the light emitting layer and electrically connected to the first semiconductor layer, and a second portion extending on an upper surface of the side extension structure in a horizontal direction, and a second electrode having a first portion electrically connected to the second semiconductor layer and a second portion extending on the upper surface of the side extension structure in the horizontal direction.


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