The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Jul. 14, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Bencherki Mebarki, Santa Clara, CA (US);

Joung Joo Lee, San Jose, CA (US);

Komal Garde, Santa Clara, CA (US);

Kishor Kumar Kalathiparambil, Santa Clara, CA (US);

Xianmin Tang, San Jose, CA (US);

Xiangjin Xie, Fremont, CA (US);

Rui Li, San Jose, CA (US);

Assignee:

Applied Materials Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); C23C 14/34 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76883 (2013.01); C23C 14/3492 (2013.01); H01L 21/2855 (2013.01);
Abstract

Methods and apparatus for processing a substrate are provided. For example, a method includes sputtering a material from a target in a PVD chamber to form a material layer on a layer comprising a feature of the substrate, the feature having an opening width defined by a first sidewall and a second sidewall, the material layer having a greater lateral thickness at the top surface of the layer than a thickness on the first sidewall or the second sidewall within the feature, depositing additional material on the layer by biasing the layer with an RF bias at a low power, etching the material layer from the layer by biasing the layer with an RF bias at a high-power, and repeatedly alternating between the low power and the high-power at a predetermined frequency.


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