The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Nov. 25, 2020
Applicant:

Soitec, Bernin, FR;

Inventors:

Young-Pil Kim, Grenoble, FR;

Isabelle Bertrand, Bernin, FR;

Christelle Veytizou, Bernin, FR;

Assignee:

Soitec, Bernin, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/762 (2006.01); H10N 30/072 (2023.01); H10N 30/88 (2023.01);
U.S. Cl.
CPC ...
H01L 21/02002 (2013.01); H01L 21/76254 (2013.01); H10N 30/072 (2023.02); H10N 30/88 (2023.02);
Abstract

A method for forming a high resistivity handle substrate for a composite substrate comprises: providing a base substrate made of silicon; exposing the base substrate to a carbon single precursor at a pressure below atmospheric pressure to form a polycrystalline silicon carbide layer having a thickness of at least 10 nm on the surface of the base substrate; and then growing a polycrystalline charge trapping layer on the carbon-containing layer.


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