The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Sep. 23, 2021
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Kashish Sharma, Tigard, OR (US);
Paul C. Lemaire, Portland, OR (US);
Dennis M. Hausmann, Lake Oswego, OR (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/02 (2006.01); C23C 16/04 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02304 (2013.01); C23C 16/0245 (2013.01); C23C 16/04 (2013.01); C23C 16/34 (2013.01); C23C 16/40 (2013.01); C23C 16/45544 (2013.01); C23C 16/56 (2013.01); H01J 37/32834 (2013.01); H01L 21/02211 (2013.01); H01L 21/0228 (2013.01); H01L 21/02315 (2013.01); H01L 21/0234 (2013.01); H01L 21/0214 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/02186 (2013.01); H01L 21/02189 (2013.01);
Abstract
The present disclosure relates to methods and apparatuses for selective deposition on a surface. In particular, a silicon-containing inhibitor can be used to selectively bind to a first region, thus inhibiting deposition of a material on that first region.